Illustration showing how selective etching steps can be employed as corrections step for defect formation during area-selective ALD to achieve a high selectivity. Mackus et al., Chem. Mater. 2019, 31, 2−12
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Bart Macco
I'm an assistant professor at the Eindhoven University of Technology with a passion for atomic-scale processing of semiconductor nanolayers. Moreover, I'm the person managing this blog! Hope you like it!
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